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  Datasheet File OCR Text:
 NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H238
APPLICATIONS
Switching and Aamplifier Applications. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T
T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation------------500mW VCES Collector- Emitter Voltage-----------30V VCEO Collector-Emitter Voltage----------25V VE B O Emitter -Base Voltage-----------5V ICCollector Current----- ---- 100mA - -1D Collector C 2D Base B 3D Emitter E TO-92
ELECTRICAL CHARACTERISTICS a=25ae(c) T
Symbol Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min 25 5 Typ Max Unit V V Test Conditions IC =2mA I B =0 I E=1|I I C A =0
BVCEO BVEBO ICES HFE
Collector Cut-off Current DC Current Gain 120
0.2
15 800
nA
V =30V V =0 CE BE V =5V, I C CE =2mA
VCE(sat1) Collector- Emitter Saturatio n Voltage VCE(sat2) Collector- Emitter Saturation Voltage VBE(sat1) Base-Emitter Saturation Voltage VBE(sat2) Base-Emitter Saturation Voltage VBE(on) fT(1) fT(2) Cob NF Base-Emitter On Voltage Current Gain-Bandwidth Product Current Gain-Bandwidth Product Output Capacitance Noise Figure hFE Classification
A B
0.07 0.2 0.73 0.87 0.55 0.62 85 150 250 3.5 2
0.2 0.6 0.83 1.05 0.7
V V V V V
IC =10mA, I B =0.5mA IC =100mA, I B =5mA IC =10mA I B =0.5mA IC =100mA I B =5mA V =5V I C CE =2mA
MHz V =3V,I C CE =0.5mA f=100MHz MHz V =5V,I C CE =10mA f=100MHz 6 10 pF dB V =10V,I E CB =0 f=1MHz V =5V,I C =0.2mA, CE f=1KHz RG O =2K
C
120 220
180 460
380 800
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H238


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